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A Reconfigurable High Speed Dedicated BISR Scheme for Repair Intra Cell Faults in Memories.

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A Reconfigurable High Speed Dedicated BISR Scheme for Repair Intra Cell Faults in Memories.


Amgoth Srinivas | Dr. A. Balaji Nehru | Ms V. Sumathi

https://doi.org/10.31142/ijtsrd7054



Amgoth Srinivas | Dr. A. Balaji Nehru | Ms V. Sumathi "A Reconfigurable High Speed Dedicated BISR Scheme for Repair Intra Cell Faults in Memories." Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-2 | Issue-1, December 2017, pp.843-857, URL: https://www.ijtsrd.com/papers/ijtsrd7054.pdf

Shrinking process technology has the advantage of lower area of Integrated Circuits (I.C s). This has allowed adding more hardware (features) to existing circuits and enhancing the existing features, Example: - adding more cores to a micro-processor or increasing the resolution of the Video processing hardware of a mobile phone, etc. Execution of complex algorithms need more local memories (SRAMs) embedded in the hardware. As memories are densely packed structures compared to logic (gates and flip flops) the probability of fault occurrence in memories is higher. Thus, adding more complex logic has increased the probability of fault occurrence in ICs and thus decreasing the yield. In this paper we present a Reconfigurable Built in Self Repair (Re-BISR) technique to repair the faults in embedded memories. We also employ Error Correction Codes (ECC) to repair single bit faults in memories. Both the above techniques combined allow us to repair the faults and thereby increasing the yield and reliability of an IC. Re-BISR can repair the faults of several memories in an IC and thus has lesser hardware overhead compared to a dedicated BISR scheme where each RAM has a dedicated BISR module. However, Re-BISR is considerably slower compared to dedicate BISR as RE-BISR operates serially on each memory. Future version of Re-BISR contains a programmable MBIST scheme to accommodate several March algorithms and also include virtual blocks for redundant memories to increase the repair rate. We implement the project using Xilinx ISE tool for simulation and synthesis and the code is written in Verilog HDL.

Built-in redundancy analysis (BIRA), built-in self-repair (BISR), built-in self-test (BIST), yield, Re-BISR, Error correcting codes.


IJTSRD7054
Volume-2 | Issue-1, December 2017
843-857
IJTSRD | www.ijtsrd.com | E-ISSN 2456-6470
Copyright © 2019 by author(s) and International Journal of Trend in Scientific Research and Development Journal. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (CC BY 4.0) (http://creativecommons.org/licenses/by/4.0)

International Journal of Trend in Scientific Research and Development - IJTSRD having online ISSN 2456-6470. IJTSRD is a leading Open Access, Peer-Reviewed International Journal which provides rapid publication of your research articles and aims to promote the theory and practice along with knowledge sharing between researchers, developers, engineers, students, and practitioners working in and around the world in many areas like Sciences, Technology, Innovation, Engineering, Agriculture, Management and many more and it is recommended by all Universities, review articles and short communications in all subjects. IJTSRD running an International Journal who are proving quality publication of peer reviewed and refereed international journals from diverse fields that emphasizes new research, development and their applications. IJTSRD provides an online access to exchange your research work, technical notes & surveying results among professionals throughout the world in e-journals. IJTSRD is a fastest growing and dynamic professional organization. The aim of this organization is to provide access not only to world class research resources, but through its professionals aim to bring in a significant transformation in the real of open access journals and online publishing.

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